MDD1951 - N-Channel MOSFET

Datasheet Summary

Description

The MDD1951 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application.

Features

 VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.5V.

MagnaChip

📥 Download Datasheet

Datasheet Details

Part number	MDD1951
Manufacturer	MagnaChip
File Size	870.81 KB
Description	N-Channel MOSFET
Datasheet	MDD1951 Datasheet
Additional preview pages of the MDD1951 datasheet.

📁 Similar Datasheet

MDD1903RH - N-Channel MOSFET Transistor (Inchange Semiconductor)
MDD1051RH - N-Channel MOSFET (INCHANGE)
MDD1080-18N7 - Diode Modules (IXYS)
MDD1080-24N7 - Diode Modules (IXYS)
MDD1080-28N7 - Diode Modules (IXYS)
MDD110A - Ordinary rectifier module (KUNERJING)
MDD142-08N1 - Standard Rectifier (IXYS)
MDD142-12N1 - Standard Rectifier (IXYS)
MDD142-14N1 - Standard Rectifier (IXYS)
MDD142-16N1 - Standard Rectifier (IXYS)

Other Datasheets by MagnaChip

MDD1951RH - N-Channel MOSFET
MDD1901 - Single N-channel Trench MOSFET
MDD1902 - Single N-channel MOSFET
MDD1903 - Single N-channel MOSFET
MDD1903RH - Single N-channel MOSFET
MDD1904 - Single N-channel MOSFET
MDD1051 - Single N-channel MOSFET
MDD10N074RH - N-channel MOSFET

Full PDF Text Transcription

Click to expand full text

MDD1951– Single N-Channel Trench MOSFET 60V MDD1951 Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ General Description The MDD1951 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features  VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.

Published: Apr 7, 2015 |