MDD1951RH
MDD1951RH is N-Channel MOSFET manufactured by MagnaChip.
Description
The MDD1951RH uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 60V
ID = 17.9A @VGS = 10V
RDS(ON)
< 45.0mΩ@ VGS = 10V
< 55.0mΩ@ VGS = 4.5V
Applications
Inverters General purpose applications
Absolute Maximum Ratings (TC =25o C unless otherwise noted)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy Junction and Storage Temperature Range
TC=25o C (a) TA=25o C (b)
TC=25o C TA=25o C
(Note 3)
Symbol VDSS VGSS
EAS TJ, Tstg
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State) Thermal Resistance, Junction-to-Case
(Note 1)
Symbol RθJA RθJC
Rating 60 ±20 17.9 4.4 80 32.8 2.0 50
-55~+150
Rating 60 3.8
Unit V V A A A W m J o C
Unit o C/W
Feb. 2024. Version...
