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MDD1951RH - N-Channel MOSFET

General Description

The MDD1951RH uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application.

Key Features

  •  VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.5V.

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Datasheet Details

Part number MDD1951RH
Manufacturer MagnaChip
File Size 876.92 KB
Description N-Channel MOSFET
Datasheet download datasheet MDD1951RH Datasheet

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MDD1951RH– Single N-Channel Trench MOSFET 60V MDD1951RH Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ General Description The MDD1951RH uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features  VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.