MDD1901
MDD1901 is Single N-channel Trench MOSFET manufactured by MagnaChip.
Description
The MDD1901 uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1901 is suitable device for DC/DC Converters and general purpose applications.
Features
VDS = 100V ID = 40A @VGS = 10V RDS(ON)
< 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V
Absolute Maximum Ratings (Tc = 25o C)
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1)
TC=25o C TC=100o C
TC=25o C TC=100o C
Symbol VDSS VGSS
ID IDM
EAS TJ, Tstg
Rating 100 ±20 40 24 80 70 28 200
-55~150
Unit V V A A A
W m J o C
Symbol...
