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MDD1901 - Single N-channel Trench MOSFET

Datasheet Summary

Description

The MDD1901 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1901 is suitable device for DC/DC Converters and general purpose applications.

Features

  •  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V D Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) G S TC=25oC TC=100oC TC=25oC TC=100oC Symbol VDSS.

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Datasheet Details

Part number MDD1901
Manufacturer MagnaChip
File Size 826.72 KB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDD1901 Datasheet
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MDD1901 – Single N-Channel Trench MOSFET 100V MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22mΩ General Description The MDD1901 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1901 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.
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