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MDD1902 - Single N-channel MOSFET

Datasheet Summary

Description

The MDD1902 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1902 is suitable device for DC/DC Converters and general purpose applications.

Features

  •  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 31mΩ @VGS = 6.0V D D (DPAK) G S G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to.

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Datasheet Details

Part number MDD1902
Manufacturer MagnaChip
File Size 1.14 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDD1902 Datasheet
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MDD1902 – Single N-Channel Trench MOSFET 100V MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ General Description The MDD1902 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1902 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 40A @VGS = 10V  RDS(ON) < 28mΩ @VGS = 10V < 31mΩ @VGS = 6.
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