Datasheet Details
| Part number | MDD1902 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.14 MB |
| Description | Single N-channel MOSFET |
| Datasheet |
 MDD1902 Datasheet
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General Description
The MDD1902 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDD1902 is suitable device for DC/DC Converters and general purpose applications.
Key Features
- VDS = 100V ID = 40A @VGS = 10V RDS(ON) < 28mΩ @VGS = 10V < 31mΩ @VGS = 6.0V D D (DPAK) G S G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to.