Description
The MDD1902 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 100V
ID = 40A @VGS = 10V
RDS(ON)
< 28mΩ @VGS = 10V
< 31mΩ @VGS = 6.0V
D
D
(DPAK)
G
S
G S
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=100oC
TC=25oC TC=100oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to.
MDD1902-MagnaChip.pdf
