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MDD1951 - N-Channel MOSFET

Description

The MDD1951 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application.

Features

  •  VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.5V.

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Datasheet Details

Part number MDD1951
Manufacturer MagnaChip
File Size 870.81 KB
Description N-Channel MOSFET
Datasheet download datasheet MDD1951 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDD1951– Single N-Channel Trench MOSFET 60V MDD1951 Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ General Description The MDD1951 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features  VDS = 60V  ID = 17.9A @VGS = 10V  RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.
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