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MDD1951 Datasheet Preview

MDD1951 Datasheet

Single N-Channel Trench MOSFET

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MDD1951
Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ
General Description
The MDD1951 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in on-
state resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior
benefit in the application.
Features
VDS = 60V
ID = 17.9A @VGS = 10V
RDS(ON)
< 45.0mΩ@ VGS = 10V
< 55.0mΩ@ VGS = 4.5V
Applications
Inverters
General purpose applications
D
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
TC=25oC
TA=25oC
(a)
(b)
TC=25oC
TA=25oC
(Note 3)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
60
±20
17.9
4.4
80
32.8
2.0
50
-55~+150
Rating
60
3.8
Unit
V
V
A
A
A
W
mJ
oC
Unit
oC/W
December 2009. Version 1.1
1 MagnaChip Semiconductor Ltd.




MagnaChip

MDD1951 Datasheet Preview

MDD1951 Datasheet

Single N-Channel Trench MOSFET

No Preview Available !

Ordering Information
Part Number
MDD1951RH
Temp. Range
-55~150oC
Package
TO-252
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 17A
VGS = 4.5V, ID = 12A
VDS = 5V, ID = 17A
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VDS = 30V, ID = 17A, VGS = 4.5V
VDS = 30V, VGS = 0V, f = 1.0MHz
VGS = 10V ,VDS = 30V, ID = 17A ,
RGEN = 5Ω
VSD IS = 5A, VGS = 0V
trr
IF = 17A, di/dt = 100A/µs
Qrr
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC,
b. PD (TA=25°C) is based on RθJA, t<10sec
3. Starting TJ=25°C, L=1mH, IAS=10.0A, VDD=60V, VGS=10V
Min Typ Max Unit
60 -
-
1.0 2.0 3.0
V
- -1
µA
- - 0.1
- 36 45
mΩ
- 44 55
- 26 - S
- 4.8 -
- 1.6 -
- 2.2 -
- 470 -
- 32 -
- 70 -
- 7.4 -
- 15.2 -
- 21.2 -
- 7.6 -
nC
pF
ns
- 0.8 1.2 V
- 29 - ns
- 32 - nC
December 2009. Version 1.1
2 MagnaChip Semiconductor Ltd.


Part Number MDD1951
Description Single N-Channel Trench MOSFET
Maker MagnaChip
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