Description
The MDU5593S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- FET1
FET2
VDS = 30V ID = 34A
VDS = 30V ID = 40A @VGS = 10V
RDS(ON) < 8.0mΩ < 11.0mΩ
< 3.3mΩ @VGS = 10V < 5.0mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5 S1/D2
S2
6
S2 S2
7 G2
8
1 2 3 4
D1 3 D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1)
Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TA=25oC
TC=.
MDU5593S-MagnaChip.pdf
