- 18A, 500V, RDS(on) = 0.32Ω@VGS = 10 V - Low gate charge ( typical 50nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS T.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLW10N80UZ

SLW201610S

SLW20N50C

SLW24N50C

SLW252010

SLW252012

SLW252012P

SLW28N50C

SLW3010

SLW3012

SLW3015

SLW3015S

SLW4010S