SLW24N50C Datasheet - Maple Semiconductor

SLW24N50C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLW24N50C Features

* - 25A, 500V, RDS(on)typ. = 167mΩ@VGS = 10 V - Low gate charge ( typical 96nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,

SLW24N50C Datasheet (950.05 KB)