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SLW24N50C

N-Channel MOSFET

SLW24N50C Features

* - 25A, 500V, RDS(on)typ. = 167mΩ@VGS = 10 V - Low gate charge ( typical 96nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,

SLW24N50C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLW24N50C Datasheet (950.05 KB)

Preview of SLW24N50C PDF

Datasheet Details

Part number:

SLW24N50C

Manufacturer:

Maple Semiconductor

File Size:

950.05 KB

Description:

N-channel mosfet.

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TAGS

SLW24N50C N-Channel MOSFET Maple Semiconductor

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