SLW60R080SS Datasheet (Maple Semiconductor)

SLW60R080SS, N-Channel MOSFET

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology.

- 7.6A, 500V, RDS(on) typ.

= 0.5Ω@VGS = 10 V This advanced technology has-bLoewegnateeschpaergcei(atyllpyicatal i2l5onrCe)d to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching p

SLW60R080SS Features

* - 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Cont