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SLW60R080SS

N-Channel MOSFET

SLW60R080SS Features

* - 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Cont

SLW60R080SS General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V This advanced technology has-bLoewegnateeschpaergcei(atyllpyicatal i2l5onrCe)d to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching p.

SLW60R080SS Datasheet (612.45 KB)

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Datasheet Details

Part number:

SLW60R080SS

Manufacturer:

Maple Semiconductor

File Size:

612.45 KB

Description:

N-channel mosfet.

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SLW60R080SS N-Channel MOSFET Maple Semiconductor

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