Datasheet4U Logo Datasheet4U.com

SLW252012P Wire Wound SMD Power Inductor

SLW252012P Description

SLW252012P Series Wire Wound SMD Power Inductor * .

SLW252012P Features

* 、1 Magnetic-resin shielded construction reduces ; buzz noise to ultra-low levels 、2 Metallization on ferrite core results in excellent ; shock resistance and damage-free durability 、3 Closed magnetic circuit design reduces leakage 、4 Small and low profile inductor; 、5 Take up less PCB real estate an

SLW252012P Applications

* 、 ; 1 Smart phone 、2 Mobile devices with multifunction such as ; adding color TV and camera 、3 Flat-screen TVs, blue-ray disc recorders, ; set top boxes 、4 Notebooks, desktop computers, servers, ; graphic cards 、5 Portable gaming devices, personal navigation ; systems, personal multimedia devices 、6

📥 Download Datasheet

Preview of SLW252012P PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
SLW252012P
Manufacturer
Sunltech
File Size
550.87 KB
Datasheet
SLW252012P-Sunltech.pdf
Description
Wire Wound SMD Power Inductor

📁 Related Datasheet

  • SLW20N50C - N-Channel MOSFET (SL SEMI)
  • SLW24N50C - N-Channel MOSFET (Maple Semiconductor)
  • SLW28N50C - N-Channel MOSFET (Maple Semiconductor)
  • SLW10N80UZ - 800V N-Channel MOSFET (Maple Semiconductor)
  • SLW18N50C - N-Channel MOSFET (Maple Semiconductor)
  • SLW60R070SJ - N-Channel MOSFET (Maple Semiconductor)
  • SLW60R080SS - N-Channel MOSFET (Maple Semiconductor)
  • SLW80R500SJ - N-Channel MOSFET (Maple Semiconductor)

📌 All Tags

Sunltech SLW252012P-like datasheet