SLW28N50C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLW28N50C Features

* - 28A, 500V, RDS(on)typ. = 0.17Ω@VGS = 10 V - Low gate charge ( typical 102nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ,

SLW28N50C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLW28N50C Datasheet (928.79 KB)

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SLW28N50C

Manufacturer:

Maple Semiconductor

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928.79 KB

Description:

N-channel mosfet.

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SLW28N50C N-Channel MOSFET Maple Semiconductor

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SLW28N50C Features

SLW28N50C General Description

Datasheet Details

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