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SLW60R070SJ

N-Channel MOSFET

SLW60R070SJ Features

* -47A, 600V, RDS(on) typ.= 60mΩ@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 170nC) D TO‐247 TO‐3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID

SLW60R070SJ General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh

*nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfo.

SLW60R070SJ Datasheet (560.09 KB)

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Datasheet Details

Part number:

SLW60R070SJ

Manufacturer:

Maple Semiconductor

File Size:

560.09 KB

Description:

N-channel mosfet.

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SLW60R070SJ N-Channel MOSFET Maple Semiconductor

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