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SLW10N80UZ 800V N-Channel MOSFET

SLW10N80UZ Description

SLW10N80UZ SLW10N80UZ 800V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLW10N80UZ Features

* - 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM

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Datasheet Details

Part number
SLW10N80UZ
Manufacturer
Maple Semiconductor
File Size
0.97 MB
Datasheet
SLW10N80UZ-MapleSemiconductor.pdf
Description
800V N-Channel MOSFET

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800V N-Channel MOSFET Maple Semiconductor
Maple Semiconductor SLW10N80UZ-like datasheet