SLW10N80UZ - 800V N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLW10N80UZ
Manufacturer	Maple Semiconductor
File Size	0.97 MB
Description	800V N-Channel MOSFET
Datasheet	SLW10N80UZ-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single P.

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Published: Dec 27, 2018 |