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SLW10N80UZ Datasheet - Maple Semiconductor

SLW10N80UZ 800V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLW10N80UZ Features

* - 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM

SLW10N80UZ Datasheet (0.97 MB)

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Datasheet Details

Part number:

SLW10N80UZ

Manufacturer:

Maple Semiconductor

File Size:

0.97 MB

Description:

800v n-channel mosfet.

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SLW10N80UZ 800V N-Channel MOSFET Maple Semiconductor

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