SLW18N50C - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLW18N50C
Manufacturer	Maple Semiconductor
File Size	267.03 KB
Description	N-Channel MOSFET
Datasheet	SLW18N50C-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 18A, 500V, RDS(on) = 0.32Ω@VGS = 10 V - Low gate charge ( typical 50nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

📁 SLW18N50C Similar Datasheet

Other Datasheets by Maple Semiconductor

Published: Apr 11, 2017 |