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SLW18N50C Datasheet - Maple Semiconductor

SLW18N50C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLW18N50C Features

* - 18A, 500V, RDS(on) = 0.32Ω@VGS = 10 V - Low gate charge ( typical 50nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Para

SLW18N50C Datasheet (267.03 KB)

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Datasheet Details

Part number:

SLW18N50C

Manufacturer:

Maple Semiconductor

File Size:

267.03 KB

Description:

N-channel mosfet.

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SLW18N50C N-Channel MOSFET Maple Semiconductor

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