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SLW18N50C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLW18N50C Features

* - 18A, 500V, RDS(on) = 0.32Ω@VGS = 10 V - Low gate charge ( typical 50nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Para

SLW18N50C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLW18N50C Datasheet (267.03 KB)

Preview of SLW18N50C PDF

Datasheet Details

Part number:

SLW18N50C

Manufacturer:

Maple Semiconductor

File Size:

267.03 KB

Description:

N-channel mosfet.

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SLW18N50C N-Channel MOSFET Maple Semiconductor

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