SLW10N80UZ Datasheet (Maple Semiconductor)

SLW10N80UZ, N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

SLW10N80UZ Features

* - 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM