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SLW10N80UZ

N-Channel MOSFET

SLW10N80UZ Features

* - 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 63 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D GDS TO-3P G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM

SLW10N80UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLW10N80UZ Datasheet (0.97 MB)

Preview of SLW10N80UZ PDF

Datasheet Details

Part number:

SLW10N80UZ

Manufacturer:

Maple Semiconductor

File Size:

0.97 MB

Description:

N-channel mosfet.

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TAGS

SLW10N80UZ N-Channel MOSFET Maple Semiconductor

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