ME04N25 Key Features
- RDS(ON)≦1.8Ω@VGS=10V
- RDS(ON)≦2.0Ω@VGS=5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Part: ME04N25
- Manufacturer: Matsuki
- Size: 480.44 KB
Related Matsuki Datasheets
| Part Number | Description |
|---|---|
| ME04N25-G | N-Channel MOSFET |
| ME06N10 | N-Channel MOSFET |
| ME06N10-G | N-Channel MOSFET |
| ME07N25 | N-Channel MOSFET |
| ME07N25-G | N-Channel MOSFET |
ME04N25 Description
The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits, and low in-line power loss that are needed in...
ME04N25 Applications
- Power Management in Note book