| Part number | ME2N7002E-G |
|---|---|
| Datasheet | ME2N7002E-G-Matsuki.pdf |
| File Size | 961.19 KB |
| Manufacturer | Matsuki |
| Description | N-Channel MOSFET |
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The ME2N7002E-G is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
ME2N7002E | N-Channel 60V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| ME2N7002E | N-Channel MOSFET |
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| ME2N70023E1-G | N-Channel MOSFET |
| ME2N7002D | N-Channel MOSFET |
| ME2N7002D1KW-G | Dual N-Channel MOSFET |
| ME2N7002D2 | N-Channel MOSFET |
| ME2N7002D2-G | N-Channel MOSFET |
| ME2N7002D2KW-G | Dual N-Channel MOSFET |
| ME2N7002DA | N-Channel MOSFET |
| ME2N7002DA-G | N-Channel MOSFET |
