ME2N7002E-G mosfet equivalent, n-channel mosfet.
ϥʳ 60V / 0.50A , RDS(ON)= 5.0ȍ@VGS=10V ϥʳ 60V / 0.30A , RDS(ON)= 5.5ȍ@VGS=4.5V ϥʳ Super high density cell design for extremely
low RDS (ON) ϥʳ Exceptional on-resistance a.
requiring up to 300mA DC and can deliver pulsed currents up to 1.2A. These products are particularly suited for low volt.
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