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ME2N7002E-G - N-Channel MOSFET

Description

The ME2N7002E-G is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • ϥʳ 60V / 0.50A , RDS(ON)= 5.0ȍ@VGS=10V ϥʳ 60V / 0.30A , RDS(ON)= 5.5ȍ@VGS=4.5V ϥʳ Super high density cell design for extremely low RDS (ON) ϥʳ Exceptional on-resistance and maximum DC current capability ϥʳ SOT-23 package design.

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Datasheet preview – ME2N7002E-G

Datasheet Details

Part number ME2N7002E-G
Manufacturer Matsuki
File Size 961.19 KB
Description N-Channel MOSFET
Datasheet download datasheet ME2N7002E-G Datasheet
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Full PDF Text Transcription

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N-Channel MOSFET ME2N7002E-G(Green) GENERAL DESCRIPTION The ME2N7002E-G is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION (SOT-23) Top View FEATURES ϥʳ 60V / 0.50A , RDS(ON)= 5.0ȍ@VGS=10V ϥʳ 60V / 0.30A , RDS(ON)= 5.5ȍ@VGS=4.
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