2N7000 Overview
The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway...
2N7000 Key Features
- Free from Secondary Breakdown
- Low Power Drive Requirement
- Ease of Paralleling
- Low CISS and Fast Switching Speeds
- Excellent Thermal Stability
- Integral Source-Drain Diode
- High Input Impedance and High Gain
