2N7000 - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	2N7000
Manufacturer	ON Semiconductor
File Size	244.78 KB
Description	N-Channel MOSFET
Datasheet	2N7000_ONSemiconductor.pdf

2N7000 Product details

Description

These N channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.These products have been designed to minimize on state resistance while providing rugged, reliable, and fast switching performance. voltage, low current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

High Density Cell Design for Low RDS(on).
Voltage Controlled Small Signal Switch.
Rugged and Reliable.
High Saturation Current Capability.
ESD Protection Level: HBM > 100 V, CDM > 2 kV.
This Device is Pb.
Free and Halogen Free DATA SHEET www. onsemi. com D G S 123 TO.
92 CASE 135AN 1 2 3 1.
Source 2.
Gate 3.
Drain TO.
92 CASE 135AR.

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Published: Apr 6, 2007 |