2N7000
Description
These N-channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
Key Features
- High Density Cell Design for Low RDS(on)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- ESD Protection Level: HBM > 100 V, CDM > 2 kV
Representative 2N7000 image (package may vary by manufacturer)
