2N7000 Datasheet | Specifications & PDF Download

DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal s

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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V

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TSM2N7000 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Fe

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input r

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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 ) 2N7002 60 V 60 V

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TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: 1. Source 2. Gate 3. Drain www.DataSheet4U.com PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS =

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WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Th

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Elektronische Bauelemente 2N7000 0.2A , 60V , RDS(ON) 5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controolled small signal

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UNISONIC TECHNOLOGIES CO., LTD 2N7000 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state re

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2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta =

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2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled

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