2N7000 Datasheet | Specifications & PDF Download

2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V

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N-Channel MOSFET ESD Protected 2000V Transistor 2N7000K N-Channel MOSFET ESD Protected 2000V Transistor Features • ESD protected 2000V • High densi

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage cont

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2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VG

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HI-SINCERITY MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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2N7000CSM MECHANICAL DATA Dimensions in mm (inches) 2.54 ± 0.13 (0.10 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.51 ± 0.10 (0.02 ± 0.004) 3 0.31 (0.012

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2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controolled small signal

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N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are

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UNISONIC TECHNOLOGIES CO., LTD 2N7000 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state re

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www.DataSheet4U.com ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F G2N7000 Description N-CHANNEL ENHANCEMENT MODE MOSFET The G2N7000 is designed

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TSM2N7000 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V ID = 200mA RDS (on), Vgs @ 10V, Ids @ 500mA = 5

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times

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2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 2 at VGS = 10 V 60 4 at VGS = 4.5 V VGS(th) (V)

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