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MG1003 Datasheet, diodes equivalent, Microsemi

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Part number: MG1003

Manufacturer: Microsemi (https://www.microsemi.com/)

File Size: 205.73KB

Download: 📄 Datasheet

Description: GUNN Diodes

📥 Download PDF (205.73KB) Datasheet Preview: MG1003

PDF File Details

Part number: MG1003

Manufacturer: Microsemi (https://www.microsemi.com/)

File Size: 205.73KB

Download: 📄 Datasheet

Description: GUNN Diodes

MG1003 Features and benefits


* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
  –95 GHz
* Low Phase Noise
* High Reliability Ap.

MG1003 Application


* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* .

MG1003 Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1.

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TAGS

MG1003
GUNN
Diodes
Microsemi

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