MRF581 Description
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
MRF581 Key Features
- Low Noise
- 2.5 dB @ 500 MHZ
- Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
MRF581 is RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS manufactured by Microsemi.
| Manufacturer | Part Number | Description |
|---|---|---|
ASI |
MRF581 | NPN SILICON RF TRANSISTOR |
Motorola Semiconductor |
MRF581 | HIGH FREQUENCY TRANSISTOR |
Advanced Power Technology |
MRF581 | RF and Microwave Discrete Low Power Power Transistors |
Motorola Semiconductor |
MRF5811LT1 | NPN Silicon High Frequency Transistor |
ASI |
MRF5812 | NPN Silicon RF Microwave Transistor |
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.