MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: Th.
ASI
MRF581 - NPN SILICON RF TRANSISTOR
MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE.
Motorola
MRF581 - HIGH FREQUENCY TRANSISTOR
MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base Voltage vCBO 36 36 Vdc Em.
Microsemi
MRF581 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Nois.
Microsemi
MRF581AG - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Nois.
Microsemi
MRF581A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Nois.
Microsemi
MRF581G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Nois.
ASI
MRF5812 - NPN Silicon RF Microwave Transistor
MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
Advanced Power Technology
MRF581A - RF and Microwave Discrete Low Power Power Transistors
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSIST.
Advanced Power Technology
MRF5812G - Bipolar Junction Transistor
MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = .
Advanced Power Technology
MRF5812 - Bipolar Junction Transistor
MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = .
Advanced Power Technology
MRF581 - RF and Microwave Discrete Low Power Power Transistors
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSIST.