MRF5811LT1 (Motorola)
NPN Silicon High Frequency Transistor
(38 views)
MRF581 (ASI)
NPN SILICON RF TRANSISTOR
MRF581
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The MRF581 is Designed for
High current low Power Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE
(35 views)
MRF581 (Microsemi)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581 MRF581G MRF581A MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Nois
(31 views)
MRF5812 (ASI)
NPN Silicon RF Microwave Transistor
MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz
(31 views)
MRF5812G (Advanced Power Technology)
Bipolar Junction Transistor
MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain =
(30 views)
MRF581 (Motorola)
HIGH FREQUENCY TRANSISTOR
MRF580
MAXIMUM RATINGS
Rating
Symbol MRF581 MRF581
Unit
Collector-Emitter Voltage
vCEO
18
18 Vdc
Collector-Base Voltage
vCBO
36
36 Vdc
Em
(29 views)
MRF581A (Advanced Power Technology)
RF and Microwave Discrete Low Power Power Transistors
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF581/MRF581A
RF & MICROWAVE DISCRETE LOW POWER TRANSIST
(29 views)
MRF581 (Advanced Power Technology)
RF and Microwave Discrete Low Power Power Transistors
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF581/MRF581A
RF & MICROWAVE DISCRETE LOW POWER TRANSIST
(28 views)
MRF581AG (Microsemi)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581 MRF581G MRF581A MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Nois
(26 views)
MRF581A (Microsemi)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581 MRF581G MRF581A MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Nois
(26 views)
MRF581G (Microsemi)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581 MRF581G MRF581A MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Nois
(26 views)
MRF5812 (Advanced Power Technology)
Bipolar Junction Transistor
MRF5812, R1, R2 MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain =
(26 views)
