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  Microsemi Electronic Components Datasheet  

VRF154FL Datasheet

RF Power Vertical MOSFET

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RF POWER VERTICAL MOSFET
The VRF154FL is a gold metallized silicon, n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, and inter-modulation
distortion.
VRF154FL
50V 600W 80MHz
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FEATURES
• Designed For 2 - 100MHz Operation
• 600W with 17dB Typical Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• Economical Flangeless Package
• Nitride Passivated
• Refractory Gold Metallization
Maximum Ratings
Symbol
VDD
VDGO
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: TC = 25°C unless otherwise specified
VRF154FL
Unit
160
160
Volts
60 Amps
±40 Volts
1350
Watts
-65 to 150
200
°C
Static Electrical Characteristics
Symbol Parameter
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 40A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0V)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
160
180
3.0
5.0
Volts
20 mA
5.0 µA
16 mhos
2 5 Volts
Thermal Characteristics
Symbol
RθJC
Characteristic
Junction to Case Thermal Resistance
Microsemi Website - http://www.microsemi.com
Min Typ Max Unit
0.13 °C/W


  Microsemi Electronic Components Datasheet  

VRF154FL Datasheet

RF Power Vertical MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 50V
f = 1MHz
VRF154FL
Min Typ Max Unit
1600
1000
pF
200
FUNCTIONAL CHARACTERISTICS
Symbol
Test Conditions
GPS
ηD
www.DataSheet4UIM.cDom(d3)
f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W
f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP 1
Min Typ Max Unit
17 dB
45 %
-25 dBc
NOTE:
1 To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
30MHz Test Circuit
Vbias R1
C10 R2 C14 C11
L1 L2
L3
R3
50V
L6 C16
C12 C15
C13
C9
L4 L5
C7
C4 C5
C6 C8
Output
C1
C2 C3
RF
Input
C1, C2, C6, C7 ARCO 465 mica trimmer
C3 1800pF ATC700B ceramic
C4 680pF metal clad 500V mica
C5 390pF metal clad 500V mica
C8 100pF ATC 700E ceramic
C9 120pF ATC 700E ceramic
C10 - C13 .01uF 100V ceramic SMT
C14 - C16 .1uF 100V ceramic SMT
L1 110nH 4t #22 0.312"d .30"l
L2 29nH 2t #22 .188" dia .10" l
L3 0.3uH - 6t #16 enam. .5" dia.
L4 22nH - 1t #16 enam. .375" dia.
L5 117nH - 3t #16 enam. .5" dia. .3"l
L6 1t #16 on 2x 267300081 .5" bead
R1-R2 1kW 1/4W
R3 10W 1/4W


Part Number VRF154FL
Description RF Power Vertical MOSFET
Maker Microsemi
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VRF154FL Datasheet PDF






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