VRF154FL
FEATURES
- Designed For 2
- 100MHz Operation
- 600W with 17d B Typical Gain @ 30MHz, 50V
- Excellent Stability & Low IMD
- mon Source Configuration
- Economical Flangeless Package
- Nitride Passivated
- Refractory Gold Metallization
Maximum Ratings
Symbol
VDD VDGO ID VGS PD TSTG TJ
All Ratings: TC = 25°C unless otherwise specified
VRF154FL 160 160 60 ±40 1350 -65 to 150 200 Unit Volts Amps Volts Watts °C
Parameter
Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature
Static Electrical Characteristics
Symbol
V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100m A) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0V) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID =...
