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  Microsemi Electronic Components Datasheet  

VRF157FLMP Datasheet

RF POWER VERTICAL MOSFET

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RF POWER VERTICAL MOSFET
The VRF157FL is a gold-metallized silicon n-channel RF power transis-
tor designed for broadband commercial and military applications requiring
high power and gain without compromising reliability, ruggedness, or inter-
modulation distortion.
VRF157FL
VRF157FLMP
50V, 600W, 80MHz
D
SS
G
FEATURES
• Improved Ruggedness V(BR)DSS = 170V
• 600W with 21dB Typical Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Conguration
• Available in Matched Pairs
• Nitride Passivated
• Economical Flangeless Package
• Refractory Gold Metallization
• High Voltage Replacement for MRF157
• RoHS Compliant
Maximum Ratings
Symbol
VDSS
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specied
VRF157FL(MP)
Unit
170 V
60 A
±40 V
1350
W
-65 to 150
200
°C
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 40A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
170 180
3.0 5.0
V
4.0 mA
4.0 μA
16 mhos
2.9 3.6 4.4
V
Thermal Characteristics
Symbol Characteristic
RθJC
RθJHS
Junction to Case Thermal Resistance
Junction to Sink Thermal Resistance (Use High Efciency Thermal Joint Compound and Planar Heat Sink
Surface.)
Min Typ Max
0.13
0.22
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
°C/W
Microsemi Website - http://www.microsemi.com
Free Datasheet http://www.datasheet-pdf.com/


  Microsemi Electronic Components Datasheet  

VRF157FLMP Datasheet

RF POWER VERTICAL MOSFET

No Preview Available !

Dynamic Characteristics
Symbol
CISS
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 50V
f = 1MHz
Functional Characteristics
Symbol
Parameter
GPS f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W
ηD f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP
IMD(d3)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP 1
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specications and information contained herein.
VRF157FL(MP)
Min Typ Max Unit
1580
810 pF
65
Min Typ Max Unit
17 21
dB
45 %
-25 dBc
Typical Performance Curves
45
5.5V
40
35
30 4.5V
25
20
3.5V
15
10 2.5V
5 1.5V.5V
0 0 2 4 6 8 10
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
1.0E8
1.0E9
Ciss
Coss
1.0E10
Crss
1.0E11
0.1 25 50
75 100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
100
90
80
70
60
250μs PULSE
TEST<0.5 % DUTY
CYCLE
TJ= -55°C
TJ= 25°C
50
40
30
20
10 TJ= 125°C
0
0 2 4 6 8 10
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
100
IDMax
10 Rds(on)
PD Max
TJ = 125°C
TC = 75°C
11
10
100 180
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
Free Datasheet http://www.datasheet-pdf.com/


Part Number VRF157FLMP
Description RF POWER VERTICAL MOSFET
Maker Microsemi
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