VRF157FLMP Datasheet | Microsemi

VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband mercial and military applications requiring high power and gain without promising reliability, ruggedness, or intermodulation distortion. S Features - Improved Ruggedness V(BR)DSS = 170V - 600W with 21d B Typical Gain @ 30MHz, 50V - Excellent Stability & Low IMD - mon Source Configuration - Available in Matched Pairs - Nitride Passivated - Economical Flangeless Package - Refractory Gold Metallization - High Voltage Replacement for MRF157 - Ro HS pliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Max All Ratings: TC =25°C unless otherwise specified VRF157FL(MP) 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100m A) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100m A) 16 2.9 3.6 4.4 Min 170 Typ 180 3.0 5.0 4.0 4.0 Max Unit V m A μA mhos V Thermal Characteristics Symbol RθJC RθJHS Characteristic Junction to Case Thermal Resistance Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint pound and Planar Heat Sink Surface.) Min Typ Max 0.13 Unit °C/W 050-4940 Rev F 9-2010 Free Datasheet http://.datasheet-pdf./...