The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices 2N3019 2N3019S
2N3057A
2N3700 2N3700S
Qualified Level JAN
JANTX JANTXV
JANS
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C(1)
2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range
Symbol VCEO VCBO VEBO IC
PT
TJ, Tstg
Value 80 140 7.0 1.0
0.8 0.4 0.5 0.4
5.0 1.8 1.8 1.16 -55 to +175
Units Vdc Vdc Vdc Adc W
W
0C
TO-39* (TO-205AD) 2N3019, 2N3019S
TO- 18* (TO-206AA) 2N3700
TO-46* (TO-206AB) 2N3057A
1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.