2N3719 transistors equivalent, silicon pnp power transistors.
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Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE.
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2N3719
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High-Speed Switching Medium-Current Switching High-Frequency Amplifiers
FEATURES:
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C.
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operati.
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