® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
The LX5535 is a power amplifier The output power for EVM(Error
optimized for WLAN applications in Vector Magnitude) of 3.5% is 25dBm
the 2.4-2.5 GHz frequency range. The (64QAM/54Mbps), where the PA
PA is implemented as a three-stage consumes 260mA total DC current.
monolithic microwave integrated The LX5535 is available in a 16-pin
circuit (MMIC) with active bias and 3mm x 3mm micro-lead package
(MLPQ-16L). The compact footprint,
The device is manufactured with an low profile, and thermal capability of
InGaP/GaAs Heterojunction Bipolar the MLP package makes the LX5535 an
Transistor (HBT) IC process ideal solution for high-gain power
(MOCVD). With single low voltage amplifier requirements for IEEE
supply of 5V, it provides 32 dB power 802.11b/g and WiMAX applications.
gain between 2.4-2.5GHz, at a low
quiescent current of 120mA.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Advanced InGaP HBT
Single-Polarity 3-5V Supply
Quiescent Current 120mA
Power Gain 32 dB
Power for EVM~3.5 %
54Mbps/64QAM : 25dBm
Total Current 260mA for
power : 28dBm
Total Current 370mA for
Small Footprint: 3x3mm2
Low Profile: 0.9mm
IEEE 802.16 WiMAX
Copyright © 2007
Rev. 1.0b, 2007-09-14
PACKAGE ORDER INFO
LQ 3×3 16 pin
RoHS Compliant / Pb-free
Note: Available in Tape & Reel.
Append the letter “TR” to the part number.
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570