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LS845 - Low Drift Monolithic Dual JFET

Key Features

  • a 15mV offset and 25-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

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Datasheet Details

Part number LS845
Manufacturer Micross
File Size 296.09 KB
Description Low Drift Monolithic Dual JFET
Datasheet download datasheet LS845 Datasheet

Full PDF Text Transcription for LS845 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LS845. For precise diagrams, and layout, please refer to the original PDF.

LS845 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS845 is a high-performance monolithic dual JFET featuring extrem...

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The LS845 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS845 features a 15mV offset and 25-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤25µV/°C LOW LEAKAGE IG = 15pA TYP. LOW NOISE en = 3nV/√Hz TYP.

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