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MGF0904A Datasheet High-power GaAs FET

Manufacturer: Mitsubishi Electric

Overview: < High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.

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General Description

The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications.

Key Features

  • High output power Po=28.0dBm(TYP. ) @f=1.65GHz,Pin=15dBm.
  • High power gain Gp=13.0dB(TYP. ) @f=1.65GHz,Pin=15dBm.
  • High power added efficiency P. A. E=40%(TYP. ) @f=1.65GHz,Pin=15dBm.

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