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MGF0904A Key Features

  • High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
  • High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm
  • High power added efficiency P.A.E=40%(TYP.) @f=1.65GHz,Pin=15dBm
  • MMDS/UMTS/WiMAX
  • 4 inch Tray (25 pcs)
  • Vds=8V
  • Ids=200mA
  • Rg=500Ω

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MGF0904A Description

The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications.