MGF0906B
MGF0906B is High-power GaAs FET manufactured by Mitsubishi Electric.
< High-power Ga As FET (small signal gain stage) >
L & S BAND / 5W non
- matched
DESCRIPTION
The MGF0906B, Ga As FET with an N-channel schottky gate, is designed for L & S band applications.
Features
- Class A operation
- High output power
P1d B=37.0d Bm(T.Y.P) @f=2.3GHz
- High power gain
GLP=11.0d B(TYP.) @f=2.3GHz
- High power added efficiency
P.A.E=40%(TYP.)
@f=2.3GHz,P1d B
- Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
- For L & S band power amplifiers
QUALITY
- IG
REMENDED BIAS CONDITIONS
- Vds=10V
- Ids=1.2A
-...
