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MGF0906B

Manufacturer: Mitsubishi Electric

MGF0906B datasheet by Mitsubishi Electric.

MGF0906B datasheet preview

MGF0906B Datasheet Details

Part number MGF0906B
Datasheet MGF0906B_MitsubishiElectricSemiconductor.pdf
File Size 743.08 KB
Manufacturer Mitsubishi Electric
Description High-power GaAs FET
MGF0906B page 2 MGF0906B page 3

MGF0906B Overview

The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications.

MGF0906B Key Features

  • Class A operation
  • High output power
  • High power gain
  • High power added efficiency
  • Hermetically sealed metal-ceramic package with ceramic lid
  • For L & S band power amplifiers
  • Vds=10V
  • Ids=1.2A
  • Rg=100Ω
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MGF0906B Distributor

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