Datasheet4U Logo Datasheet4U.com

MGF0906B Datasheet High-power Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: < High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non -.

General Description

The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications.

Key Features

  • Class A operation.
  • High output power P1dB=37.0dBm(T. Y. P) @f=2.3GHz.
  • High power gain GLP=11.0dB(TYP. ) @f=2.3GHz.
  • High power added efficiency P. A. E=40%(TYP. ) @f=2.3GHz,P1dB.
  • Hermetically sealed metal-ceramic package with ceramic lid.

More Datasheets from Mitsubishi Electric

Part Number Description
MGF0904A High-power GaAs FET
MGF0905A High-power GaAs FET
MGF0907B High-power GaAs FET
MGF0909A L /S BAND POWER GaAs FET
MGF0910A High-power GaAs FET
MGF0911A L / S BAND POWER GaAs FET
MGF0918A L & S BAND GaAs FET [ SMD non - matched ]
MGF0919A L & S BAND GaAs FET [ SMD non matched ]
MGF0921A LnS Band GaAs FET
MGF1202 GaAs FET

MGF0906B Distributor