MGF0906B Description
The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications.
MGF0906B Key Features
- Class A operation
- High output power
- High power gain
- High power added efficiency
- Hermetically sealed metal-ceramic package with ceramic lid
- For L & S band power amplifiers
- Vds=10V
- Ids=1.2A
- Rg=100Ω