MGF0904A Description
The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications.
MGF0904A Key Features
- High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
- High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm
- High power added efficiency P.A.E=40%(TYP.) @f=1.65GHz,Pin=15dBm
- MMDS/UMTS/WiMAX
- 4 inch Tray (25 pcs)
- Vds=8V
- Ids=200mA
- Rg=500Ω