MGF0905A
MGF0905A is High-power GaAs FET manufactured by Mitsubishi Electric.
< High-power Ga As FET (small signal gain stage) >
L & S BAND / 2.5W non
- matched
DESCRIPTION
The MGF0905A, Ga As FET with an N-channel schottky gate, is designed for use L & S band amplifiers.
Features
- High output power Po=34.0d Bm(TYP.) @f=1.65GHz,Pin=26d Bm
- High power gain Gp=8.0d B(TYP.) @f=1.65GHz,Pin=26d Bm
- High power added efficiency P.A.E=40%(TYP.) @f=1.65GHz,Pin=26d Bm
APPLICATION
- for L & S band power amplifiers
QUALITY
- GG
Packaging
- 4 inch Tray (25 pcs)
REMENDED BIAS CONDITIONS
- Vds=8V
- Ids=800m A
-...
