MGF0905A Description
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.
MGF0905A Key Features
- High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
- High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
- High power added efficiency P.A.E=40%(TYP.) @f=1.65GHz,Pin=26dBm
- for L & S band power amplifiers
- 4 inch Tray (25 pcs)
- Vds=8V
- Ids=800mA
- Rg=100Ω