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MGF0905A - High-power GaAs FET

General Description

The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.

Key Features

  • High output power Po=34.0dBm(TYP. ) @f=1.65GHz,Pin=26dBm.
  • High power gain Gp=8.0dB(TYP. ) @f=1.65GHz,Pin=26dBm.
  • High power added efficiency P. A. E=40%(TYP. ) @f=1.65GHz,Pin=26dBm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< High-power GaAs FET (small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E=40%(TYP.) @f=1.