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MGF0907B Datasheet High-power Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: < High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND /10W non -.

General Description

The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use L & S band applications.

Key Features

  • Class A operation.
  • High output power P1dB=40.0dBm(T. Y. P) @f=2.3GHz.
  • High power gain GLP=10.0dB(TYP. ) @f=2.3GHz.
  • High power added efficiency P. A. E=37%(TYP. ) @f=2.3GHz,P1dB.
  • Hermetically sealed metal-ceramic package with ceramic lid.

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MGF0907B Distributor