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MGF0910A - High-power GaAs FET

General Description

The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.

Key Features

  • Class A operation.
  • High output power P1dB=38.0dBm(T. Y. P) @f=2.3GHz.
  • High power gain GLP=11.0dB(TYP. ) @f=2.3GHz.
  • High power added efficiency P. A. E=45%(TYP. ) @f=2.3GHz,P1dB.
  • Hermetically sealed metal-ceramic package with ceramic lid.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND /6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES • Class A operation • High output power P1dB=38.0dBm(T.Y.P) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E=45%(TYP.) @f=2.3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid APPLICATION • For L & S band power amplifiers QUALITY • IG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=1.3A • Rg=100Ω Absolute maximum ratings (Ta=25°C) Symbol Parameter Ratings VGDO Gate to Source Voltage VGSO Gate to source voltage -15 -15 ID Drain Current 5 IGR Reverse gate current -15 IGF Forward gate current 31.