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MGF0910A

Manufacturer: Mitsubishi Electric

MGF0910A datasheet by Mitsubishi Electric.

MGF0910A datasheet preview

MGF0910A Datasheet Details

Part number MGF0910A
Datasheet MGF0910A_MitsubishiElectricSemiconductor.pdf
File Size 537.65 KB
Manufacturer Mitsubishi Electric
Description High-power GaAs FET
MGF0910A page 2 MGF0910A page 3

MGF0910A Overview

The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.

MGF0910A Key Features

  • Class A operation
  • High output power
  • High power gain
  • High power added efficiency
  • Hermetically sealed metal-ceramic package with ceramic lid
  • For L & S band power amplifiers
  • Vds=10V
  • Ids=1.3A
  • Rg=100Ω
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MGF0910A Distributor

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