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MGF0919A - L & S BAND GaAs FET [ SMD non matched ]

General Description

The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Key Features

  • High output power Po=30dBm(TYP. ) @f=1.9GHz,Pin=12dBm.
  • High power gain Gp=19dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=37%(TYP. ) @f=1.9GHz,Pin=12dBm.
  • Hermetic Package.

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MITSUBISHI SEMICONDUCTOR MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm • High power gain Gp=19dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers Fig.