MGF0919A Description
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0919A Key Features
- High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
- High power gain Gp=19dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
- Hermetic Package
- For UHF Band power amplifiers
- Vds=10V
- Ids=300mA
- Rg=500Ω
- 01:Tape & Reel(1K), -03:Trai(50pcs)