MGF0919A
MGF0919A is L & S BAND GaAs FET [ SMD non matched ] manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR<Ga As FET>
L & S BAND Ga As FET [ SMD non
- matched ]
DESCRIPTION
The MGF0919A Ga As FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
Features
- High output power Po=30d Bm(TYP.) @f=1.9GHz,Pin=12d Bm
- High power gain Gp=19d B(TYP.) @f=1.9GHz
- High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin=12d Bm
- Hermetic Package
APPLICATION
- For UHF Band power amplifiers
Fig.1
QUALITY
- GG
REMENDED BIAS CONDITIONS
- Vds=10V
- Ids=300m A
- Rg=500Ω
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)...
