MGF0918A Description
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non matched.
MGF0918A Key Features
- High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
- High power gain Gp=20dB(TYP.) @f=1.9GHz
- High power added efficiency hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm
- Hermetic Package
- For UHF Band power amplifiers
- Vds=10V
- Ids=150mA
- Rg=1kW