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MGF0918A - L & S BAND GaAs FET [ SMD non - matched ]

General Description

The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

matched ]

Key Features

  • High output power Po=27dBm(TYP. ) @f=1.9GHz,Pin=8dBm.
  • High power gain Gp=20dB(TYP. ) @f=1.9GHz.
  • High power added efficiency hadd=45%(TYP. ) @f=1.9GHz,Pin=8dBm.
  • Hermetic Package.

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Preliminary DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR MGF0918A L & S BAND GaAs FET [ SMD non – matched ] FEATURES · High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm · High power gain Gp=20dB(TYP.) @f=1.9GHz · High power added efficiency hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm · Hermetic Package APPLICATION · For UHF Band power amplifiers Fig.1 QUALITY · GG RECOMMENDED BIAS CONDITIONS · Vds=10V · Ids=150mA · Rg=1kW Delivery Tape & Reel (Ta=25°C) Absolute maximum ratings Symbol VGSO Parameter Gate to sourcebreakdown voltage Ratings -15 -15 400 -1.2 5.