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MGF0918A Datasheet L & S Band Gaas Fet [ Smd Non - Matched ]

Manufacturer: Mitsubishi Electric

Overview: Preliminary.

General Description

The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

MITSUBISHI SEMICONDUCTOR MGF0918A L & S BAND GaAs FET [ SMD non – matched ]

Key Features

  • High output power Po=27dBm(TYP. ) @f=1.9GHz,Pin=8dBm.
  • High power gain Gp=20dB(TYP. ) @f=1.9GHz.
  • High power added efficiency hadd=45%(TYP. ) @f=1.9GHz,Pin=8dBm.
  • Hermetic Package.

MGF0918A Distributor