MGF0918A
MGF0918A is L & S BAND GaAs FET [ SMD non - matched ] manufactured by Mitsubishi Electric.
Preliminary
DESCRIPTION
The MGF0918A Ga As FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR<Ga As FET>
L & S BAND Ga As FET [ SMD non
- matched ]
Features
- High output power Po=27d Bm(TYP.) @f=1.9GHz,Pin=8d Bm
- High power gain Gp=20d B(TYP.) @f=1.9GHz
- High power added efficiency hadd=45%(TYP.) @f=1.9GHz,Pin=8d Bm
- Hermetic Package
APPLICATION
- For UHF Band power amplifiers
Fig.1
QUALITY
- GG
REMENDED BIAS CONDITIONS
- Vds=10V
- Ids=150m A
- Rg=1k W
Delivery
Tape &...
