MGF0911A
MGF0911A is L / S BAND POWER GaAs FET manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR 〈Ga As FET〉
L, S BAND POWER Ga As FET
DESCRIPTION
The MGF0911A, Ga As FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
Unit:millimeters
Features
- Class A operation
- High output power P1d B=41d Bm(TYP)
- High power gain GLP=11d B(TYP)
- High power added efficiency ηadd=40%(TYP) @2.3GHz,P1d B
- Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz
@2.3GHz
2 3
2-R1.25
APPLICATION
UHF band power amplifiers
QUALITY GRADE
- IG
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=2.6A
- Rg=50Ω
- Refer to Bias Procedure
1 GATE 2 SOURCE(FLANGE)
GF-21
3...
