MGF0911A Description
The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters.
MGF0911A Key Features
- Class A operation
- High output power P1dB=41dBm(TYP)
- High power gain GLP=11dB(TYP)
- High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB
- Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz
- VDS=10V
- ID=2.6A
- Rg=50Ω
- Refer to Bias Procedure