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MGF0911A - L / S BAND POWER GaAs FET

General Description

The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

Key Features

  • Class A operation.
  • High output power P1dB=41dBm(TYP).
  • High power gain GLP=11dB(TYP).
  • High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB.
  • Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4.

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Full PDF Text Transcription (Reference)

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MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES • Class A operation • High output power P1dB=41dBm(TYP) • High power gain GLP=11dB(TYP) • High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE • IG 10.0 RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.