MGF0909A Description
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeters.
MGF0909A Key Features
- High output power P1dB=38dBm(TYP.)
- High power gain GLP=11dB(TYP.)
- High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm
- VDS=10V
- ID=1.3A
- Rg=100Ω
- Refer to Bias Procedure