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MGF0909A

Manufacturer: Mitsubishi Electric

MGF0909A datasheet by Mitsubishi Electric.

MGF0909A datasheet preview

MGF0909A Datasheet Details

Part number MGF0909A
Datasheet MGF0909A_MitsubishiElectricSemiconductor.pdf
File Size 22.93 KB
Manufacturer Mitsubishi Electric
Description L /S BAND POWER GaAs FET
MGF0909A page 2 MGF0909A page 3

MGF0909A Overview

The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeters.

MGF0909A Key Features

  • High output power P1dB=38dBm(TYP.)
  • High power gain GLP=11dB(TYP.)
  • High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm
  • VDS=10V
  • ID=1.3A
  • Rg=100Ω
  • Refer to Bias Procedure
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MGF0909A Distributor

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