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MGF0909A - L /S BAND POWER GaAs FET

General Description

The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

Key Features

  • High output power P1dB=38dBm(TYP. ).
  • High power gain GLP=11dB(TYP. ).
  • High power added efficiency ηadd=45%(TYP. ) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm 2 1 @f=2.3GHz 2 0.6±0.2 ø2.2 3.

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MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeters FEATURES • High output power P1dB=38dBm(TYP.) • High power gain GLP=11dB(TYP.) • High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm 2 1 @f=2.3GHz 2 0.6±0.2 ø2.2 3 APPLICATION For UHF Band power amplifiers 5.0 QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=1.3A • Rg=100Ω • Refer to Bias Procedure 9.0±0.2 14.