MGF0909A
MGF0909A is L /S BAND POWER GaAs FET manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR Ga As FET
L, S BAND POWER Ga As FET
DESCRIPTION
The MGF0909A, Ga As FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
Unit:millimeters
Features
- High output power P1d B=38d Bm(TYP.)
- High power gain GLP=11d B(TYP.)
- High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1d B=20d Bm @f=2.3GHz,Pin=20d Bm
@f=2.3GHz
0.6±0.2 ø2.2
APPLICATION
For UHF Band power amplifiers
QUALITY GRADE
- GG
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=1.3A
- Rg=100Ω
- Refer to Bias Procedure
9.0±0.2 14.0
1 GATE 2 SOURCE 3...
