Datasheet4U Logo Datasheet4U.com

MGF0909A Datasheet L /s Band Power Gaas Fet

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs.

General Description

The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

OUTLINE DRAWING Unit:millimeters

Key Features

  • High output power P1dB=38dBm(TYP. ).
  • High power gain GLP=11dB(TYP. ).
  • High power added efficiency ηadd=45%(TYP. ) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm 2 1 @f=2.3GHz 2 0.6±0.2 ø2.2 3.

More Datasheets from Mitsubishi Electric

Part Number Description
MGF0904A High-power GaAs FET
MGF0905A High-power GaAs FET
MGF0906B High-power GaAs FET
MGF0907B High-power GaAs FET
MGF0910A High-power GaAs FET
MGF0911A L / S BAND POWER GaAs FET
MGF0918A L & S BAND GaAs FET [ SMD non - matched ]
MGF0919A L & S BAND GaAs FET [ SMD non matched ]
MGF0921A LnS Band GaAs FET
MGF1202 GaAs FET

MGF0909A Distributor