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MGF4841CL Datasheet Power GaAs HEMT

Manufacturer: Mitsubishi Electric

General Description

The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

The MGF4841CL is designed for automotive application and AEC-Q101 qualified.

Outline Drawing

Overview

< Power GaAs HEMT > MGF4841CL Micro-X type plastic package.

Key Features

  • High gain and High Pout,sat Glp=8.5dB, Pout,sat=11.5dBm (Typ. ) @ f=24.3GHz.