MGF4951A hemt equivalent, super low noise ingaas hemt.
Low noise figure
@ f=12GHz
MGF4951A : NFmin. = 0.40dB (Typ.)
MGF4952A : NFmin. = 0.60dB (Typ.)
Fig.1
High associated gain
@ f=12GHz
Gs = 12.0dB (Typ.)
APPLICATIO.
The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
MGF.
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