MGF0912A Description
The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
MGF0912A Key Features
- High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
- High power gain Gp=10.5dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm
- Hermetic Package
- For L/S Band power amplifiers
- Vds=10V
- Ids=2.6A
- Rg=50Ω