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MGF0912A Datasheet L & S BAND GaAs FET

Manufacturer: Mitsubishi Electric

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General Description

The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

OUTLINE DRAWING Unit : millimeters

Overview

MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched.

Key Features

  • High output power Po=41.5dBm(TYP. ) @f=1.9GHz,Pin=33dBm.
  • High power gain Gp=10.5dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=38%(TYP. ) @f=1.9GHz,Pin=33dBm.
  • Hermetic Package ‡A ƒÓ2.2 0.6.
  • }0.2 ‡B ‡A.

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