MGF0913A Description
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0913A Key Features
- High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
- High power gain Gp=13dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
- Hermetic Package
- For UHF Band power amplifiers
- Vds=10V
- Ids=200mA
- Rg=500Ω
- 01:Tape & Reel(1K), -03:Trai(50pcs)