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MGF0913A Datasheet L & S BAND GaAs FET

Manufacturer: Mitsubishi Electric

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General Description

The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Overview

MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched.

Key Features

  • High output power Po=31dBm(TYP. ) @f=1.9GHz,Pin=18dBm.
  • High power gain Gp=13dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=48%(TYP. ) @f=1.9GHz,Pin=18dBm.
  • Hermetic Package.

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