MGF0913A Datasheet, Mitsubishi Electric

* High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
* High power gain Gp=13dB(TYP.) @f=1.9GHz
* High power added efficiency ηadd=48%(TYP.) @f=1.9GHz,Pin=18.

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The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES
* High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
* High power gain Gp=13dB(TYP.) @f=1.9GHz
* High power added efficiency ηadd=.