MGF0915A Description
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0915A Key Features
- High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm
- High power gain Gp=14.5 dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm
- Hermetic Package
- For UHF Band power amplifiers
- Ids=800 mA
- Rg=100Ω
- Vds=10V
- 01:Tape & Reel(1K), -03:Trai(50pcs)