Datasheet4U Logo Datasheet4U.com

MGF0915A Datasheet L & S BAND GaAs FET

Manufacturer: Mitsubishi Electric

📥 Download Datasheet

General Description

The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Overview

MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched.

Key Features

  • High output power Po=36.5 dBm(TYP. ) @f=1.9GHz,Pin=23dBm.
  • High power gain Gp=14.5 dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=50 %(TYP. ) @f=1.9GHz,Pin=23dBm.
  • Hermetic Package.

More Datasheets from Mitsubishi Electric

Part Number Description
MGF0912A L & S BAND GaAs FET
MGF0913A L & S BAND GaAs FET
MGF0916A L & S BAND GaAs FET
MGF0917A L & S BAND GaAs FET
MGF0951P L & S BAND GaAs FET
MGF0952P L & S BAND GaAs FET
MGF0953P High-power GaAs FET
MGF1304A for Microwave Low-Noise Amplifiers N-Channel Schottky Barrier Gate Type
MGF1305 Microwave Low Noise Amplifier
MGF1451A Low Noise MES FET