MGF0953P datasheet, fet equivalent, Mitsubishi Electric

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Features and benefits

* High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
* High power gain Gp=16.5dB(TYP.) @f=2.15GHz
* High power added efficiency add=40%(TYP.) @f=2.15GHz.

Description

The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES
* High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
* High power gain Gp=16.5dB(TYP.) @f=2.15GHz
* High power added efficiency .

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