MGF0953P
MGF0953P is High-power GaAs FET manufactured by Mitsubishi Electric.
< High-power GaAs FET (small signal gain stage) >
L & S BAND / 0.6W SMD / Plastic Mold non
- matched
DESCRIPTION
The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
Features
- High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
- High power gain Gp=16.5dB(TYP.) @f=2.15GHz
- High power added efficiency add=40%(TYP.) @f=2.15GHz,Pin=10dBm
- Plastic Mold Lead
- less Package
APPLICATION
- For L/S Band power amplifiers
QUALITY
- GG
REMENDED BIAS CONDITIONS
- Vds=10V
- Ids=0.15A
- Rg=1000
Delivery Tape &...
