MT2301 Datasheet - Mos-Tech Semiconductor

P-Channel Enhancement Mode Field Effect Transistor

MT2301 Features

* 3.3 A,

* 20 V. RDS(ON) = 0.072 Ω @ VGS =

* 4.5 V RDS(ON) = 0.096Ω @ VGS =

* 2.5 V

* Low gate charge (3.6 nC typical)

* High performance trench technology for extremely low RDS(ON)

* SuperSOTTM -23 provides low RDS(ON) and 30% higher pow

MT2301 General Description

This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance. These devices a re well suit ed for portable electronics a.

MT2301 Datasheet (679.67 KB)

MT2301 Datasheet Preview — Preview of MT2301 PDF

Datasheet Details

Part number:

MT2301

Manufacturer:

Mos-Tech Semiconductor

File Size:

679.67 KB

Description:

P-channel enhancement mode field effect transistor.

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MT2301 P-Channel Enhancement Mode Field Effect Transistor Mos-Tech Semiconductor

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MT2301 Features

MT2301 General Description

Datasheet Details

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