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2N828 - PNP germanium epitaxial mesa transistor

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2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas. PNP germanium epitaxial mesa transistor for highspeed switching applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Current Total Device Dissipation @ TA =25°C Derate above 25°C Total Device Dissiopation @ TC =25°C . Derate above 25 C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD PD TJ , Tstg Value 15 15 2.5 200 150 2.0 300 4.0 -65 to +100 Unit Vdc Vdc Vdc mAdc mW mWjOC mW mW;oC °c FIGURE 1 - SWITCHING TIME TEST CIRCUIT '--1----r- INPUT WAVEFORM +,m ~5.4V PULSE VOLTS INTERNAL RESISTANCE 2000 UK 2800 TYPE RSAMPLING RESISTOR 200 NOTE, 1•• ==_lmA _3Ydc (APPROX) (ADJUST FOR Ie == _IOmA) I., == +0.
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