2N827 Datasheet | Motorola Semiconductor

2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium mesa transistor for high-speed switching applica.tions. MAXIMUM RATINGS Rating Colle Ctor..Sase Voltage Colleet()t..Emitter Voltage Colle¢tor..1!:mitter Voltage Etnitter-Base VOltage Collector Current (Contifiuou8) Junction Temperature Storage Temperature Oetlce D18s1patibh @ 250C Aatlbierit Temperature . (berate 2tn W/OC above 25()C) Symbol VCS VCi:S VCEX VES rc Tstg Po Value ~O 20 10 4.0 100 +100 -65 to + 100 150 2.0 Unit Vdc Vde Vdc Vdc m Ade °0 °c m W m W/o C Ie. = -IOm Adc Gt NERAt OR t.., '" 50!l I" = -l.3ri Adc Vee'" -3V I.. '" -3.lm Adc INPUT PULSE t, ::: I, "" 1 ns INPUT PULSE WIMH '" 100 ns 215 !l (50% OUTY CYCLE) SCOPE 1.2K!l Z,N"'" 1 Mego el N ~ 20- p:r t, "" 1ns sw ITCH IN. TIME TEST CIRCUIT 2-98 2N827 (continued) ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC =100 MAdc, IE =0) Collector-Emitter Breakdown Voltage (IC= 100 tl Adc, VEB=O) BVCBO BVCES 20 22 20 22 Vdc --- ---...