The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N828 (GERMANIUM)
CASE 22
(TO·1S)
Collector
connected to cas.
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Current
Total Device Dissipation @ TA =25°C
Derate above 25°C
Total Device Dissiopation @ TC =25°C .
Derate above 25 C Operating and Storage Junction
Temperature Range
Symbol
VCEO VCB VEB IC PD
PD
TJ , Tstg
Value
15 15 2.5 200 150 2.0 300 4.0
-65 to +100
Unit
Vdc Vdc Vdc mAdc mW mWjOC mW mW;oC
°c
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
'--1----r- INPUT WAVEFORM
+,m
~5.4V
PULSE VOLTS
INTERNAL RESISTANCE
2000
UK
2800
TYPE RSAMPLING RESISTOR 200
NOTE, 1•• ==_lmA
_3Ydc (APPROX) (ADJUST FOR Ie == _IOmA)
I., == +0.
2N828 Datasheet
